Chin. Phys. Lett.  2007, Vol. 24 Issue (10): 2991-2993    DOI:
Original Articles |
Surface Structure of Large Synthetic Diamonds by High Temperature and High Pressure
ZANG Chuan-Yi1,2;HUANG Guo-Feng2;MA Hong-An1,2;JIA Xiao-Peng1,2
1Institute of Material Science and Engineering, Henan Polytechnic University, Jiaozuo 4540002Key National Laboratory for Superhard Materials, Jilin University, Changchun 130012
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ZANG Chuan-Yi, HUANG Guo-Feng, MA Hong-An et al  2007 Chin. Phys. Lett. 24 2991-2993
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Abstract With NiMnCo and FeCoNi alloys as solvent metals, large single-crystal diamonds of about 3mm across are grown by temperature gradient method
(TGM) under high temperature and high pressure (HPHT). Although both {100} and {111} surfaces are developed by a layer growth mechanism, some different characteristic patterns are seen clearly on the different surfaces, no matter whether NiMnCo or FeCoNi alloys are taken as the solvent metals. For {100} surface, it seems to have been melted or etched greatly, no dendritic patterns to be found, and only a large number of growth hillocks are dispersed net-likely; while for {111} surface, it often seems to be more smooth-faced, no etched or melted traces are present even when a lot of depressed trigonal growth layers. This distinct difference between {111} and {100} surfaces is considered to be related to the difference of surface-atom distribution of different surfaces, and {111} surfaces should be more
difficult to be etched and more steady than {100} surfaces.
Keywords: 81.05.Uw      81.10.Aj      81.10.h      68.35.Bs     
Received: 29 March 2007      Published: 20 September 2007
PACS:  81.05.Uw  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.10.h  
  68.35.Bs  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I10/02991
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ZANG Chuan-Yi
HUANG Guo-Feng
MA Hong-An
JIA Xiao-Peng
[1] Bovenkerk H P 1962 Amer. Mineral 46 952
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[3] Kanda H et al 1989 J. Cryst. Growth 94 115
[4] Burns R C et al 1990 J. Cryst. Growth 104 257
[5] Zang C Y et al 2006 Chin. Phys. Lett. 23 214
[6] Sumiya H, Toda N and Satoh S 2002 J. Cryst. Growth 237 1281
[7] Zang C Y et al 2004 Chin. Phys. Lett. 21 1648
[8] Jia X et al 1999 Diamond Relat. Mater. 8 1895
[9] Kanda H et al 2000 Brazilian Journal of Physics 30 482
[10] Jia X et al 1998 Review of High Pressure Science andTechnology 7 998
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