Chin. Phys. Lett.  2008, Vol. 25 Issue (1): 302-305    DOI:
Original Articles |
Homoepitaxial Growth and Optical Properties of ZnO Polar Nanoleaves
ZHANG Chun-Zhi1;GAO Hong1;ZHANG Di1;ZHANG Xi-Tian 1,2
1Department of Physics, Harbin Normal University, Harbin 1500802Department of Physics, The Chinese University of Hong Kong, Hong Kong
Cite this article:   
ZHANG Chun-Zhi, GAO Hong, ZHANG Di et al  2008 Chin. Phys. Lett. 25 302-305
Download: PDF(4416KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Using a mixture of ZnO and Te powders as the source material, ZnO nanoleaves with high yield and uniform morphology are fabricated by thermal evaporation. Each nanoleaf is constructed with a nanowire and a nanodisc on one side of the nanowire near the top. The polygonal nanodisc is in symmetric
distribution in relation to the nanowires and has polar planes ±(0001) as surfaces. A local homoepitaxial growth mechanism of ZnO polar nanodiscs induced by Te is proposed. With thin nanodiscs, the ZnO nanoleaves could be used in nanolasers, sensors, and photoelectronic nanodevices. Room-temperature photoluminescence result implies good crystalline quality of the ZnO nanoleaves.
Keywords: 81.05.Dz      81.07.Vb      81.15.Gh     
Received: 27 August 2007      Published: 27 December 2007
PACS:  81.05.Dz (II-VI semiconductors)  
  81.07.Vb (Quantum wires)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I1/0302
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHANG Chun-Zhi
GAO Hong
ZHANG Di
ZHANG Xi-Tian
[1] Jin Z C, Hamberg I and Granqvist C G 1988 J. Appl.Phys. 64 5117
[2] Pearton S J, Abernathy C R, Overberg M E, Thaler G T, NortonD P, Theodoropoulou N, Hebard A F, Park Y D, Ren F, Kim J and Boatner LA 2003 J. Appl. Phys. 93 1
[3] Macdonald A H, Schiffer P and Samarth N 2005 Nat.Mater. 4 195
[4] Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2005 Progr. Mater. Sci. 50 293
[5] Xia Y N, Yang P D, Sun Y G, Wu Y Y, Mayers B, Gates B, Yin YD, Kim F and Yan Y Q 2003 Adv. Mater. 15 353
[6] Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E,Russo R and Yang P 2001 Science 292 1897
[7] Zhang B P, Binh N T, Wakatsuki K, Segawa Y, Yamada Y, UsamiN, Kawasaki M and Koinuma H 2004 Appl. Phys. Lett. 84 4098
[8] Lao C S, Gao P X, Yang R S, Zhang Y, Dai Y and Wang Z L 2005 Chem. Phys. Lett. 417 359
[9] Gao P X, Ding Y, Mai W J, Hughes W L, Lao C S and Wang Z L2005 Science 309 1700
[10] Gao H, Zhang X T, Zhou M Y, Zhang Z G and Wang X Z 2007 Nanotechnology 18 065601
[11] Gao P X, Lao C S, Ding Y and Wang Z L 2006 Adv. Funct.Mater. 16 53
[12] Li F, Ding Y, Gao P X, Xin X Q and Wang Z L 2004 AngewChem. 116 5350
[13] Xu C X, Sun X W, Dong Z L and Yu M B 2004 Appl. Phys.Lett. 85 3878
[14] Liu J, Zhang Y, Qi J J, He J, Huang Y H and Zhang X M 2006 Acta Phys. Chim. Sin. 22 38 (in Chinese)
[15] Wang X D, Song J H and Wang Z L 2006 Chem. Phys. Lett. 424 86
[16] Lauhon L J, Gudiksen M S, Wang D and Lieber C M 2002 Nature 420 57
[17] Liang Y, Zhang X T, Liu Z, Qin L, Zhang E, Zhao C Z, Gao Hand Zhang Z G 2006 Physica E 33 191
[18] Xing Y J, Xi Z H, Xue Z Q, Zhang X D, Song J H, Wang R M, XuJ, Song Y, Zhang S L and Yu D P 2003 Appl. Phys. Lett. 831689
[19] Li Y B, Bando Y, Sato T and Kurashima K 2002 Appl.Phys. Lett. 81 144
[20] Djuri\v si\'c A B, Choy W C H, Roy V A L, Leung Y H, Kwong C Y,Cheah K W, Rao T K G, Chan W K, Lui H F and Surya C 2004 Adv.Funct. Mater. 14 856
[21] Dijken A V, Meulenkamp E A, Vanmaekelbergh D and Meijerink A2000 J. Phys. Chem. B 104 1715
[22] Zhang X T, Liu Y C, Zhang J Y, Lu Y M, Shen D Z, Fan X Wand Kong X G 2003 J. Crystal Growth 254 80
Related articles from Frontiers Journals
[1] DING Bin-Feng. Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction[J]. Chin. Phys. Lett., 2012, 29(3): 302-305
[2] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 302-305
[3] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 302-305
[4] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 302-305
[5] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 302-305
[6] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 302-305
[7] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 302-305
[8] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 302-305
[9] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 302-305
[10] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 302-305
[11] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 302-305
[12] YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing** . Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 302-305
[13] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 302-305
[14] LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. Chin. Phys. Lett., 2011, 28(12): 302-305
[15] HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing**, WANG Yong-Sheng . Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering[J]. Chin. Phys. Lett., 2011, 28(12): 302-305
Viewed
Full text


Abstract