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Electronic Properties of p-Type δ-Doped GaAs Structure under Electric Field |
| Emine OZTURK1;Ismail SOKMEN2 |
| 1Department of Physics, Cumhuriyet University, 58140 SIVAS, Turkey2Department of Physics, Dokuzeylul University, IZMIR, Turkey |
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| Cite this article: |
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Emine OZTURK, Ismail SOKMEN 2008 Chin. Phys. Lett. 25 1415-1418 |
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Abstract We theoretically investigate the electronic properties of p-type δ-doped GaAs inserted into a quantum well under the electric field, at T=0K. We will investigate the influence of the electric field on the δ-doping concentration for a uniform distribution. The depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations calculate by solving the Schrodinger and Poisson equations self consistently. It is found that the changes of the electronic properties are quite sensitive to the applied electric field and the doping concentration. As different from single n-type δ-doped structure, we see a replace between the ground light-hole (lh1) subband and the first excited heavy-hole (hh2) subband whenever the external electric field reaches a critical value. We find the abrupt changing of the subband energies and the subband populations whenever the applied electric field reaches a certain value. Also, it is found that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.
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| Keywords:
73.20.Dx
73.90.+f
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Received: 16 November 2007
Published: 31 March 2008
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| PACS: |
73.20.Dx
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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