| Original Articles |
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DEPENDENCE OF THE ENERGY LEVELS RELATED TO TITANIUM IN SILICON ON ELECTRIC FIELD |
| GAO Xiaoping;XU Zhenjia(Hsu Chen-chia) |
| Institute of Semiconductors, Academia Sinica, Beijing |
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| Cite this article: |
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GAO Xiaoping, XU Zhenjia(Hsu Chen-chia) 1986 Chin. Phys. Lett. 3 473-476 |
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Abstract DLTS and DDLTS measurements show that impurity Ti in Si is associated with two electron energy levels Ec-.0.22eV, Ec-0.54eV, and one hole energy level Ev+0.29eV. The “thermal activation energy” of these two electron energy levels decreases with the increase of the electric fieid, 5ut that of the hole energy level is independent on electric field. It suggests that these three energy levels should be associated with donor centers.
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Published: 01 October 1986
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