Ti:Sapphire-Laser Pumped 20 at.% Yb:YAG Thin Chip with Continuous-Wave Laser Output of 356 mW at 1.053μm

Chin. Phys. Lett.

2000, Vol. 17

Issue (2): 104-105 DOI:

Original Articles

Ti:Sapphire-Laser Pumped 20 at.% Yb:YAG Thin Chip with Continuous-Wave Laser Output of 356 mW at 1.053μm

YANG Pei-Zhi^1,2;DENG Pei-Zhen¹;ZHANG Ying-Hua¹;LIU Yu-Pu¹;HUANG Guo-Song¹;CHEN Wei¹;XU Jun¹

¹Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 ²Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050

Cite this article:

YANG Pei-Zhi, DENG Pei-Zhen, ZHANG Ying-Hua et al 2000 Chin. Phys. Lett. 17 104-105

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Abstract We analyzed the spectroscopic performances of Yb:YAG and developed an efficient room-temperature 20 at.% Yb:YAG thin chip (6 Χ 6 Χ 0.5 mm) laser operating at 1.053μm pumped by Ti-sapphire laser operating at 940nm. Output power of 356 mW was obtained for an absorbed pump power of 784mW. The slope efficiency was 69%, and the extrapolated threshold was 273mW. The slope efficiency was as high as 72% with absorbed pump power exceeding 730mW.

Keywords: 42.55.Rz

Published: 01 February 2000

PACS:

42.55.Rz

(Doped-insulator lasers and other solid state lasers)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I2/0104

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	YANG Pei-Zhi
	DENG Pei-Zhen
	ZHANG Ying-Hua
	LIU Yu-Pu
	HUANG Guo-Song
	CHEN Wei
	XU Jun

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