Preparation and Optical Properties of Nanocrystalline Ga0.62In0.38Sb Embedded in SiO2 Composite Films

Chin. Phys. Lett.

2000, Vol. 17

Issue (2): 142-144 DOI:

Original Articles

Preparation and Optical Properties of Nanocrystalline Ga_0.62In_0.38Sb Embedded in SiO₂ Composite Films

LIU Fa-Min;ZHANG Li-De

Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031

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LIU Fa-Min, ZHANG Li-De 2000 Chin. Phys. Lett. 17 142-144

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Abstract Nanocrystalline Ga_0.62In_0.38Sb embedded in SiO₂ matrix has been fabricated by radio frequency magnetron cosputtering. X-ray photoelectron spectroscopy strongly supports the existence of nanocrystalhe Ga_0.62In_0.38Sb embedded in SiO₂ matrix. The room-temperature Raman spectrum shows that the Raman peaks of the Ga_0.62In_0.38SbSiO₂ composite film have a larger red shift of about 95.3cm^-1 (longitudinal-optic) and 120.1 cm^-1 (transverse-optic) than those of the bulk GaSb. This can be explained by the phonon confinement and tensile stress effects. The room-temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 2.43 eV compared with that of the bulk semiconductor, suggesting the existence of quantum size effects.

Keywords: 81.15.Cd 78.30.Fs 78.40.Fy

Published: 01 February 2000

PACS:	81.15.Cd	(Deposition by sputtering)
	78.30.Fs	(III-V and II-VI semiconductors)
	78.40.Fy	(Semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I2/0142

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