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Magnetoresistance in FeSi/Cu Compositionally Modulated Films |
| LUAN Kaizheng;LIU Yihua;MA Xiaoding |
| Department of Physics, Shandong University, Jinan 250100 |
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| Cite this article: |
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LUAN Kaizheng, LIU Yihua, MA Xiaoding 1992 Chin. Phys. Lett. 9 209-212 |
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Abstract FeSi/Cu compositionally modulated amorphous films with different thicknesses of Cu layers have been obtained by radio-frequency sputtering. We studied the resistivity and magnetoresistance of these samples at room temperature. The resistivity of FeSi/Cu compositionally modulated films (CMFs) increases with decreasing the thickness of Cu layers. The FeSi/Cu CMFs show a negative magnetoresistance effect. The magnetoresistance decreases with decreasing the Cu layer thickness d, when dc, is over 20Å, but it turns to increase with decreasing dc, when dc, is below 20Å. This is probably caused by the polarization of conductive electrons of Cu.
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| Keywords:
75.70.-i
73.40.-c
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Published: 01 April 1992
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| PACS: |
75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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73.40.-c
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(Electronic transport in interface structures)
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