| Original Articles |
|
|
|
|
Intraband Relaxation and Its Influences on Quantum Dot Lasers |
| DENG Sheng-Ling;HUANG Yong-Zhen;YU Li-Juan |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
|
| Cite this article: |
|
DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan 2005 Chin. Phys. Lett. 22 2077-2080 |
|
|
|
Abstract A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.
|
| Keywords:
78.20.-e
78.20.Bh
42.55.Px
|
|
|
Published: 01 August 2005
|
|
| PACS: |
78.20.-e
|
(Optical properties of bulk materials and thin films)
|
| |
78.20.Bh
|
(Theory, models, and numerical simulation)
|
| |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
