Chin. Phys. Lett.  1997, Vol. 14 Issue (7): 535-537    DOI:
Original Articles |
Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu1
China Institute of Atomic Energy, Beijing 102413 1Beijing General Research Institute for Non-ferrous Metals, Beijing 100088
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ZHU Sheng-yun, LUO Qi, FAN Zhi-guo et al  1997 Chin. Phys. Lett. 14 535-537
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Abstract The defects induced by 64 MeV 19F ion irradiation to a Auence of 4.3 ×1016/cm2 are investigated in GaAs by positron annihilation lifetime technique. Di-vacancies are created by the irradiation. The formation of tri- and quadri-vacancies is observed during thermal annealing. The di-, tri-and quadri-vacancies are annealed away at 350, 550 and 800°C, respectively.
Keywords: 61.80.-x      61.72.-y     
Published: 01 July 1997
PACS:  61.80.-x (Physical radiation effects, radiation damage)  
  61.72.-y (Defects and impurities in crystals; microstructure)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I7/0535
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ZHU Sheng-yun
LUO Qi
FAN Zhi-guo
WANG Chun-rui
ZHENG Sheng-nan
GOU Zhen-hui
LI An-li
QIAN Jia-yu
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