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Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
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ZHU Sheng-yun;LUO Qi;FAN Zhi-guo;WANG Chun-rui;ZHENG Sheng-nan;GOU Zhen-hui;LI An-li;QIAN Jia-yu1 |
China Institute of Atomic Energy, Beijing 102413
1Beijing General Research Institute for Non-ferrous Metals, Beijing 100088
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Cite this article: |
ZHU Sheng-yun, LUO Qi, FAN Zhi-guo et al 1997 Chin. Phys. Lett. 14 535-537 |
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Abstract The defects induced by 64 MeV 19F ion irradiation to a Auence of 4.3 ×1016/cm2 are investigated in GaAs by positron annihilation lifetime technique. Di-vacancies are created by the irradiation. The formation of tri- and quadri-vacancies is observed during thermal annealing. The di-, tri-and quadri-vacancies are annealed away at 350, 550 and 800°C, respectively.
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Keywords:
61.80.-x
61.72.-y
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Published: 01 July 1997
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PACS: |
61.80.-x
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(Physical radiation effects, radiation damage)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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