Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces

Chin. Phys. Lett.

1997, Vol. 14

Issue (8): 609-612 DOI:

Original Articles

Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces

BAN Da-yan¹;FANG Rong-chuan¹;JI XUE Jian-geng¹;LU Er-dong²;XU Peng-shou²

¹Department of Physics, ²National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026

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BAN Da-yan, FANG Rong-chuan, JI XUE Jian-geng et al 1997 Chin. Phys. Lett. 14 609-612

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Abstract By using synchrotron radiation photoelectron spectroscopy, the band lineup of Ge/CdTe (111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe (111) interface grown at room temperature is 0.88 ± 0.1 eV, which agrees well with previously reported value. While as for the interface grown at 280°C, an obvious reduction of valence band offsets is observed and attributed to sthe effect of different interface dipole.

Keywords: 73.20.At

Published: 01 August 1997

PACS:

73.20.At

(Surface states, band structure, electron density of states)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I8/0609

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	BAN Da-yan
	FANG Rong-chuan
	JI XUE Jian-geng
	LU Er-dong
	XU Peng-shou

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