Fabrication and Investigation of an Upconversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode

Chin. Phys. Lett.

2005, Vol. 22

Issue (7): 1806-1808 DOI:

Original Articles

Fabrication and Investigation of an Upconversion Quantum-Well Infrared Photodetector Integrated with a Light-Emitting Diode

ZHEN Hong-Lou¹;LI Ning¹;XIONG Da-Yuan¹;ZHOU Xu-Chang¹;LU Wei¹;LIU Hui-Chun²

¹National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 ²Institute of Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada

Cite this article:

ZHEN Hong-Lou, LI Ning, XIONG Da-Yuan et al 2005 Chin. Phys. Lett. 22 1806-1808

Download: PDF(204KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8μm has been transferred to the near infrared band at 0.8μm by the upconversion process.

Keywords: 85.60.Gz 85.60.Jb 85.35.Be 68.65.Fg

Published: 01 July 2005

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	85.60.Jb	(Light-emitting devices)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	68.65.Fg	(Quantum wells)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I7/01806

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHEN Hong-Lou
	LI Ning
	XIONG Da-Yuan
	ZHOU Xu-Chang
	LU Wei
	LIU Hui-Chun

Related articles from Frontiers Journals

[1]	LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 1806-1808
[2]	ZENG Chang, ZHANG Shu-Ming, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN**[J]. Chin. Phys. Lett., 2012, 29(1): 1806-1808
[3]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 1806-1808
[4]	XIE Zi-Li, ZHANG Rong, LIU Bin, XIU Xiang-Qian, SU Hui, LI Yi, HUA Xue-Mei, ZHAO Hong, CHEN Peng, HAN Ping, SHI Yi, ZHENG You-Dou . Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells**[J]. Chin. Phys. Lett., 2011, 28(8): 1806-1808
[5]	ZHAO Yong, XU Chao, WANG Wan-Jun, ZHOU Qiang, HAO Yin-Lei, YANG Jian-Yi, WANG Ming-Hua, JIANG Xiao-Qing . Photocurrent Effect in Reverse-Biased p-n Silicon Waveguides in Communication Bands**[J]. Chin. Phys. Lett., 2011, 28(7): 1806-1808
[6]	Seoung-Hwan Park, Yong-Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park, Doyeol Ahn . Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers**[J]. Chin. Phys. Lett., 2011, 28(7): 1806-1808
[7]	CHEN Bin, YANG Yin-Tang, CHAI Chang-Chun, ZHANG Xian-Jun . Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector**[J]. Chin. Phys. Lett., 2011, 28(6): 1806-1808
[8]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 1806-1808
[9]	GAO Bo, LIU Hong-Xia, WANG Shu-Long . AlGaN/GaN Ultraviolet Detector with Dual Band Response**[J]. Chin. Phys. Lett., 2011, 28(5): 1806-1808
[10]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 1806-1808
[11]	CHEN Jun, FAN Guang-Han, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer**[J]. Chin. Phys. Lett., 2011, 28(12): 1806-1808
[12]	LI Li-Gong, LIU Shu-Man, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo . Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(11): 1806-1808
[13]	WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED**[J]. Chin. Phys. Lett., 2011, 28(11): 1806-1808
[14]	LI Xiu-Ping, WEI Hua-Rong, XU Li-Ping, GONG Jian-Ping, YAN Wei-Xian . Tunneling Processes in Optically Excited Quantum Dots[J]. Chin. Phys. Lett., 2011, 28(10): 1806-1808
[15]	DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 1806-1808

Viewed

Full text

Abstract