Carrier-Density-Dependent Electron Spin Relaxation in GaAs/AlGaAs Multi Quantum Wells

Chin. Phys. Lett.

2005, Vol. 22

Issue (9): 2320-2323 DOI:

Original Articles

Carrier-Density-Dependent Electron Spin Relaxation in GaAs/AlGaAs Multi Quantum Wells

SHOU Qian;WU Yu;LIU Lu-Ning;WEN Jin-Hui;LAI Tian-Shu;LIN Wei-Zhu

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275

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SHOU Qian, WU Yu, LIU Lu-Ning et al 2005 Chin. Phys. Lett. 22 2320-2323

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Abstract The carrier-density-dependent electron spin relaxation processes in GaAs/AlGaAs multi quantum wells are investigated by a femtosecond pump probe experiment. The spin relaxation time presents two distinguishable trends with the increasing excitation density. It increases from 60ps to 70ps with carrier densities from 1× 10¹⁷cm^-3 to 5×10¹⁷cm^-3 and gradually saturates up to ～80ps at 4×10¹⁸cm^-3. The experimental results are attributed to the combined competition between collision intensification and scattering potential screening and provide a good experimental confirmation for the theoretical D’yakonov--Perel’ mechanism descriptions.

Keywords: 47.65.Re 72.25.Dc 72.25.Rb

Published: 01 September 2005

PACS:	47.65.Re
	72.25.Dc	(Spin polarized transport in semiconductors)
	72.25.Rb	(Spin relaxation and scattering)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I9/02320

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	SHOU Qian
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