Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates

Chin. Phys. Lett.

2005, Vol. 22

Issue (11): 2936-2939 DOI:

Original Articles

Current-Induced Resistive Effect in Cu/MgO/La_0.9Sr_0.1 MnO₃ Trilayers on SrTiO₃ (001) Substrates

FENG Jia-Feng¹;ZHAO Kun^2,3;HUANG Yan-Hong²;ZHAO Jian-Gao¹;Lü Hui-Bin²;HE Meng²;HAN Xiu-Feng¹;ZHAN Wen-Shan¹

¹State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ²Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ³International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016

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FENG Jia-Feng, ZHAO Kun, HUANG Yan-Hong et al 2005 Chin. Phys. Lett. 22 2936-2939

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Abstract Cu/MgO/La_0.9Sr_0.1MnO₃ pillars are fabricated on SrTiO₃ (001) substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage--current (V--I) curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the V--I characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change ΔR/R₀, ～ -63.2%, is obtained under a current density of 1.0×10⁴ Acm^-2. Especially, ΔR₀depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.

Keywords: 75.47.Lx 73.50.-h 75.70.Ak

Published: 01 November 2005

PACS:	75.47.Lx	(Magnetic oxides)
	73.50.-h	(Electronic transport phenomena in thin films)
	75.70.Ak	(Magnetic properties of monolayers and thin films)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I11/02936

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	FENG Jia-Feng
	ZHAO Kun
	HUANG Yan-Hong
	ZHAO Jian-Gao
	Lü Hui-Bin
	HE Meng
	HAN Xiu-Feng
	ZHAN Wen-Shan

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