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Formation of Carbon Nitride Films by Nitrogen Ion Bombardment on C60 Films |
| REN Zhong-min;DU Yuan-cheng;YING Zhi-feng;LI Fu-ming;LIN Jing1;REN Yun-Zhu1;ZONG Xiang-fu1 |
| Department of Physics, Fudan University, State Key Joint Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Shanghai 200433
1Institute of Materials Science, Fudan University, Shanghai 200433 |
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| Cite this article: |
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REN Zhong-min, DU Yuan-cheng, YING Zhi-feng et al 1996 Chin. Phys. Lett. 13 714-717 |
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Abstract The synthesis of covalent carbon nitride films becomes an important subject in the materials research field. As a new synthetic method two low-energy (400 and 1000eV) nitrogen ion beams are used to bombard on C60 thin films individually. The bombarded films are used for Raman and x-ray photoelectron spectroscopy (XPS) measurements. The results of the analyses show that under the bombardment of 400eV nitrogen ion beam, the film still contains a large amount of undestructed C60 molecules. In the case of l000eV bombardment, only a little amount of C60 molecules is kept undestructed. The experimental results also show that the destructed carbon species will combine chemically with nitrogen ions to form stable covalent carbon nitride, confirmed by the Raman peaks of, e.g., 2240cm-1. The XPS Nls and Cls lines also indicate the formation of covalent carbon nitride in the bombarded films.
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| Keywords:
81.15.Jj
34.50.Rk
62.20.-x
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Published: 01 September 1996
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| PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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34.50.Rk
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(Laser-modified scattering and reactions)
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62.20.-x
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(Mechanical properties of solids)
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