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Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation |
| YING Zhi-feng;REN Zhong-min;DU Yuan-cheng;LI Fu-ming;LIN Jing1;REN Yun-zhu1;ZONG Xiang-fu1 |
| Department of Physics, and State Key Lab oratory for Materials Modification by Laser, Ion and Electron beams, Fudan University, Shanghai 200433
1Institute of Materials Science, Fudan University, Shanghai 200433 |
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| Cite this article: |
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YING Zhi-feng, REN Zhong-min, DU Yuan-cheng et al 1996 Chin. Phys. Lett. 13 878-880 |
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Abstract In order to obtain high quality carbon nitride films, x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film: (a) laser-ablated amorphous carbon (a-C) films, (b) a-C films after a 1 keV nitrbgen ion beam bombardment. (c) carbon nitride (CNx) films synthesized by ablation assisted with ion beam bombardment, (d) CNx films after a 50eV nitrogen ion beam bombardment, and (e) CNx films after a 1 keV nitrogen ion beam bombardment. The comparison among these films showed that the concurrent deposition of CNx films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment. In the case of concurrent deposited CNx films, a post-treatment by a nitrogen ion beam bombardment with an appropriate energy (possibly less than 1 keV) was proposed to improve the ratio of C-N binding structures in the deposited films.
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81.15.Jj
34.50.Rk
62.20.–x
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Published: 01 November 1996
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| PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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34.50.Rk
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(Laser-modified scattering and reactions)
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62.20.–x
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