Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field

Chin. Phys. Lett.

1995, Vol. 12

Issue (2): 102-105 DOI:

Original Articles

Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field

MA Jianwei;CHEN Zhenghao;CUI Dafu;YUAN Zhenyu;YANG Guozhen

Institute of Physics, Academia Sinica, Deijing 100080

Cite this article:

MA Jianwei, CHEN Zhenghao, CUI Dafu et al 1995 Chin. Phys. Lett. 12 102-105

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Abstract Theoretical calculations of the quantum confined Stark shift for the first heavy hole exciton (hhl--el) in step quantum well are given. A significant change in Stark shift is achieved in specially stepped potential shape, which is more than two times larger than the conventional rectangular quantum well. The structure has the advantage of a large change in absorption, which is one of the best candidates for the optical modulators utilizing the quantum confined Stark effect (QCSE) in GaAs/AlGaAs. Relations between QCSE and stepped structure are discussed in the optimization for large Stark shift.

Keywords: 73.20.Dx 42.65.Hw 78.20.Jq

Published: 01 February 1995

PACS:	73.20.Dx
	42.65.Hw	(Phase conjugation; photorefractive and Kerr effects)
	78.20.Jq	(Electro-optical effects)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I2/0102

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	MA Jianwei
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