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Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam |
| WANG Hai-Yun1;WENG Hui-Min1;HANG De-Sheng2;ZHOU Xian-Yi1;YE Bang-Jiao1;FAN Yang-Mei1;HAN Rong-Dian1;C. C. Ling3;Y. P. Hui3 |
| 1Department of Modern Physics, University of Science and Technology of China, Hefei 230027
2Department of Physics, Nanjing University, Nanjing 210093
3Department of Physics, The University of Hong Kong, Hong Kong
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| Cite this article: |
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WANG Hai-Yun, WENG Hui-Min, HANG De-Sheng et al 2003 Chin. Phys. Lett. 20 1105-1108 |
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Abstract The defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after annealing, the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials. When the sample was annealed at 1400 °C for 30 min in vacuum, a 20-nm thickness Si layer was found on the top of the SiC substrate, this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages. After 10 MeV electron irradiation, for n-type 6H-SiC, the S parameter increased from 0.4739 to 0.4822, and the relative positron-trapping rate was about 27.878 times of the origin sample, this shows that there are some defects created in n-type 6H-SiC. For p-type 6H-SiC, it is very unclear, this may be because of the opposite charge of vacancy defects.
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| Keywords:
61.82.Fk
78.70.-g
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Published: 01 July 2003
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| PACS: |
61.82.Fk
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(Semiconductors)
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78.70.-g
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(Interactions of particles and radiation with matter)
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