| Original Articles |
|
|
|
|
Growth of MgB2 Thin Films by Chemical Vapor Deposition Using B2H6 as a Boron Source |
| WANG Shu-Fang;ZHU Ya-Bin;LIU Zhen;ZHOU Yue-Liang;ZHANG Qin;CHEN Zheng-Hao;LU Hui-Bin;YANG Guo-Zhen |
| Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics, Chinese Academy of Sciences, Beijing 100080 |
|
| Cite this article: |
|
WANG Shu-Fang, ZHU Ya-Bin, LIU Zhen et al 2003 Chin. Phys. Lett. 20 1356-1358 |
|
|
|
|
Abstract Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapor deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high purity magnesium bulk at 890°C in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented. The films exhibit a zero-resistance transition of about 38 K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 x 107A/cm2 at 10 K in zero field.
|
| Keywords:
74.70.Ad
74.78.-w
81.15.Gh
74.25.Sv
|
|
|
Published: 01 August 2003
|
|
| PACS: |
74.70.Ad
|
(Metals; alloys and binary compounds)
|
| |
74.78.-w
|
(Superconducting films and low-dimensional structures)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
74.25.Sv
|
(Critical currents)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
