| Original Articles |
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Realization of Low Threshold of InGaAs/InAlAs Quantum Cascade
Laser |
| LI Cheng-Ming;LIU Feng-Qi;JIN Peng;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LI Cheng-Ming, LIU Feng-Qi, JIN Peng et al 2003 Chin. Phys. Lett. 20 1478-1481 |
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Abstract By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1μm is operated at the threshold of 0.73kA/cm2 at liquid nitrogen temperature with the repetition rate of 10 kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.
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| Keywords:
32.30.Rj
42.55.Px
81.15.Hi
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Published: 01 September 2003
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| PACS: |
32.30.Rj
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(X-ray spectra)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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