| Original Articles |
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Growth of ZnO Thin Films on Lattice-Matched Substrates by Pulsed-Laser Deposition |
| YU Qing-Xuan1,2;XU Bo2;WU Qi-Hong2;LIAO Yuan2;WANG Guan-Zhong2;FANG Rong-Chuan2 |
| 1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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YU Qing-Xuan, XU Bo, WU Qi-Hong et al 2003 Chin. Phys. Lett. 20 2235-2238 |
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Abstract ZnO films were grown on GaN and sapphire substrates by pulse laser deposition, respectively. The effects of crystalline quality on the optical properties in ZnO epitaxial layers were investigated by x-ray rocking curve and photoluminescence. The x-ray rocking curve of the film deposited on the GaN substrate has the full half maximum (FWHM) of 0.45°, whereas the FWHM of the x-ray θ-rocking curve of the ZnO film deposited on a sapphire substrate was measured to be about 0.77°. In photoluminescence (PL) measurement, the intensity of UV photoluminescence for the ZnO film on the GaN substrate decreased by approximately two orders of magnitude in comparison with that of the ZnO film on sapphire. It is concluded that the UV luminescence intensity almost does not depend on the textured growth of the ZnO thin film.
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| Keywords:
74.25.Gz
61.72.-y
61.82.Fk
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Published: 01 December 2003
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| PACS: |
74.25.Gz
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(Optical properties)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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61.82.Fk
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(Semiconductors)
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