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Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates |
LI Xue-Chun;WANG You-Nian |
State Key Laboratory of Materials Modification, Department of Physics, Dalian University of Technology, Dalian 116023 |
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Cite this article: |
LI Xue-Chun, WANG You-Nian 2004 Chin. Phys. Lett. 21 364-366 |
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Abstract Using a dynamic sheath model, we have studied the secondary-electron emission effects at one-dimensional planar dielectric surface in plasma immersion ion implantation. The temporal evolution of the sheath thickness, the surface potential of dielectric, and the ions dose accumulated on the dielectric surface are obtained. The numerical results demonstrate that the charging effects is greatly enhanced by the secondary electron emission effects, so the sheath thickness becomes thinner, the surface potential of dielectric decreases fast and the ions dose accumulated on the dielectric surface significantly increases.
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Keywords:
52.40.Kh
52.65.Yy
52.77.Dq
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Published: 01 February 2004
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PACS: |
52.40.Kh
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(Plasma sheaths)
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52.65.Yy
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(Molecular dynamics methods)
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52.77.Dq
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(Plasma-based ion implantation and deposition)
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