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Structural and Photoluminescence Characterization of GaN Film Grown on Si(111)Substrate |
| YE Zhi-zhen;ZHANG Hao-xiang;LU Huan-ming;ZHAO Bing-hui |
| State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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YE Zhi-zhen, ZHANG Hao-xiang, LU Huan-ming et al 1999 Chin. Phys. Lett. 16 293-294 |
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Abstract GaN epilayer grown on Si(111)substrate by a novel vacuum reaction method rather than metal organic chemical vapor deposition or molecule beam epitaxy is reported. Scanning electron micrograph shows that surface of GaN film is flat and crack-free. A pronounced GaN (0002) peak appears in the x-ray diffraction pattern. The full width at half-maximum (FWHM) of the double-crystal x-ray rocking curve for (0002) diffraction from the GaN epilayer is 30arcmin. The photoluminescence spectrum shows that the GaN epilayer emits light at the wavelength of 365nm with an FWHM of 8nm (74.6meV).
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| Keywords:
78.55.Cr
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Published: 01 April 1999
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