| Original Articles |
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Fabrication and Characterization of Nanocrystalline VO$_{2}$ Thin Films |
| WANG Hong-Chen1,2;YI Xin-Jian1,3;LAI Jian-Jun1;LI Yi1,2 |
| 1Department of Optoelectronic Engineer, Huazhong University of Science and Technology, Wuhan 430074
2The National Laboratory for Optoelectronics, 1037 Loyu Road, Wuhan 430074
3The Key Laboratory of Education Ministry for Imaging Recognition and Intelligence Control, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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WANG Hong-Chen, YI Xin-Jian, LAI Jian-Jun et al 2005 Chin. Phys. Lett. 22 1746-1748 |
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Abstract Nanocrystalline VO2 films with phase transition temperature 34°C have been fabricated on Si3N4-film-coated silicon and quartz substrates by argon-annealing films of metastable VO2(B). The original VO2(B) films are obtained by ion beam sputtering in an argon-oxygen atmosphere at 200°C. The nanocrystalline VO2 films exhibit strong changes in electrical and optical properties when a phase transition is completed. The phase transition temperature in the as-fabricated samples is about 34°C, which is smaller in comparison with 68°C in the single-crystalline VO2 material. A lower phase transition temperature is favorable for device applications such as smart window coating and low power consumption optical switching.
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| Keywords:
64.70.Nd
71.30.+h
81.07.Bc
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Published: 01 July 2005
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| PACS: |
64.70.Nd
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(Structural transitions in nanoscale materials)
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71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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81.07.Bc
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(Nanocrystalline materials)
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