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Computational Analysis of the Vertical Bridgman Growth of Te Doped GaSb Under Microgravity |
| LIU Yong-Cai1,2;CHEN Wan-Chun1,3;GE Pei-Wen1;HUO Chong-Ru1 |
| 1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2School of Chemical Engineering, Tianjin University, Tianjin 300072
3National Microgravity Laboratory, Chinese Academy of Sciences, Beijing 100080
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| Cite this article: |
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LIU Yong-Cai, CHEN Wan-Chun, GE Pei-Wen et al 2000 Chin. Phys. Lett. 17 775-777 |
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Abstract A transient analysis of Te doped GaSb melt growth process is performed using finite element method. The solute concentration at the growth interface increases with time because of k < 1. The growth interface shape becomes a little flat at the beginning of the growth compared with the initial shape. Radial segregation occurs even under the μg condition. This segregation increases with the increase of gravity when gravity is small, and reaches a maximum at g = 10-3 for our system.
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| Keywords:
81.10.Mx
61.72.Ss
02.70.Dh
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Published: 01 October 2000
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