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Valence and Electronic Shell Configuration Characters of Damage-Resistant Dopants in LiNbO3 Crystals |
| ZHANG Guo-quan;ZHANG Guang-yin;LIU Si-min;XU Jing-jun;SUN Qian;LIU Jian-jun |
| Photonics Center, College of Physics Science, Nankai University, Tianjin 300071 |
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ZHANG Guo-quan, ZHANG Guang-yin, LIU Si-min et al 1998 Chin. Phys. Lett. 15 686-688 |
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Abstract We analyze the valence and electronic shell configuration characters of all damage-resistant dopants found in LiNbO3 crystals up to now. We show that all damage-resistant dopants have only one valence state. We also show that the electronic shell configurations of these damage-resistant ions are filled fully, as are the cases of the inert elements. from this point of view, we conclude that the anti-site NbLi should be involved in the charge transport process, while the Li vacancy VLi is not involved in the charge transport process. It also can give us some insights about how to select a damage-resistant dopant for LiNbO3 crystal.
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| Keywords:
79.20. Ds
72.40. +w
78.20.Dj
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Published: 01 September 1998
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