Chin. Phys. Lett.  1999, Vol. 16 Issue (10): 758-760    DOI:
Original Articles |
Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs
LIN Wei-zhu;HUANG Chun;ZHANG Hai-chao;WEN Jin-hui;GUO Bing;LAI Tian-shu
State Key Laboratory of Ultrafast Laser Spectroscopy, Department of Physics Zhongshan University, Guangzhou 510275
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LIN Wei-zhu, HUANG Chun, ZHANG Hai-chao et al  1999 Chin. Phys. Lett. 16 758-760
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Abstract Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been selectively studied with femtosecond absorption saturation measurements by tuning the pump-probe photon energy just above the doped electron Fermi edge. A heavy hole-phonon scattering time of ~ 300fs has been measured, which is consistent with that calculated by a numerical model. Accordingly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.
Keywords: 78.47.+p      78.55.Et     
Published: 01 October 1999
PACS:  78.47.+p  
  78.55.Et (II-VI semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I10/0758
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LIN Wei-zhu
HUANG Chun
ZHANG Hai-chao
WEN Jin-hui
GUO Bing
LAI Tian-shu
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