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Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs |
LIN Wei-zhu;HUANG Chun;ZHANG Hai-chao;WEN Jin-hui;GUO Bing;LAI Tian-shu |
State Key Laboratory of Ultrafast Laser Spectroscopy, Department of Physics Zhongshan University, Guangzhou 510275 |
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Cite this article: |
LIN Wei-zhu, HUANG Chun, ZHANG Hai-chao et al 1999 Chin. Phys. Lett. 16 758-760 |
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Abstract Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been selectively studied with femtosecond absorption saturation measurements by tuning the pump-probe photon energy just above the doped electron Fermi edge. A heavy hole-phonon scattering time of ~ 300fs has been measured, which is consistent with that calculated by a numerical model. Accordingly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.
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Keywords:
78.47.+p
78.55.Et
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Published: 01 October 1999
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