Chin. Phys. Lett.  1999, Vol. 16 Issue (12): 928-930    DOI:
Original Articles |
Electron-Spectroscopy Study of Amorphous CN:Ti Films
CAO Ze-xian1;GUO Jian-dong1;WANG En-ge1;LIU Feng-qin2
1State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 2Institute of High Energy Physics, Chinese Academy of Sciences, Beijing
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CAO Ze-xian, GUO Jian-dong, WANG En-ge et al  1999 Chin. Phys. Lett. 16 928-930
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Abstract Amorphous CN:Ti films deposited by using the reactive magnetron sputtering method were annealed in vacuum under 200 to 600°C. Incorporation of Ti (less than 3at.%) has brought some new perspectives to the material. Electron-energy-loss spectrum indicates improved conductivity in CN:Ti films as in the insulating CN films. The high-resolution core-level x-ray photoelectron spectroscopy (XPS) studies show that most carbon atoms form homeopolar bonding in as-deposited CN:Ti film. While the N Is line always shrinks with increasing annealing temperature, the total full width at half maximum of C Is line decreases only at annealing temperature over 300°C when the broadening due to heterobonding formation is outdone by the effect of increasing order. An enhanced π-band feature in the valence-XPS spectra at high annealing temperatures confirms the graphitization tendency of this material.
Keywords: 82.80.Pv      73.20.At     
Published: 01 December 1999
PACS:  82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))  
  73.20.At (Surface states, band structure, electron density of states)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I12/0928
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