Chin. Phys. Lett.  2024, Vol. 41 Issue (11): 117101    DOI: 10.1088/0256-307X/41/11/117101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Pressure-Induced Structural Transition and Enhanced Photoelectric Properties of Tm$_{2}$S$_{3}$
Zhi-Wei Shen1,2, Zhong-Yan Wu2*, Shao-Jie Wang1,2, He-Chong Wang1,2, Hong-Kai Li1,2, Jing Song1,2, Guo-Ying Gao2, Lin Wang2*, and Yong-Jun Tian2
1Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
2Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology (MMST), Yanshan University, Qinhuangdao 066004, China
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Zhi-Wei Shen, Zhong-Yan Wu, Shao-Jie Wang et al  2024 Chin. Phys. Lett. 41 117101
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Abstract Rare earth sesquisulfides have drawn growing attention in photoelectric applications because of their excellent electronic and photoelectric properties upon compression. We investigate the structural, electrical, and photoelectric properties of Tm$_{2}$S$_{3}$ under high pressure through electrical impedance, UV-vis absorption, Raman spectroscopy, x-ray diffraction, and photoelectric measurements. It is found that $\delta$-Tm$_{2}$S$_{3}$ transforms into high-pressure $\alpha$-phase around 5 GPa, accompanied by a substantial reduction in atomic distance, bandgap, and resistivity. Consequently, the photocurrent density and responsivity of Tm$_{2}$S$_{3}$ exhibit dramatic increase behavior, achieving five orders of magnitude enhancement in $\alpha$-phase compared with the initial $\delta$-Tm$_{2}$S$_{3}$. Moreover, $\alpha $-phase maintains a high photocurrent responsivity of three orders of magnitude after unloading. This work demonstrates significant enhancement of the photoelectric properties of Tm$_{2}$S$_{3}$ by applying pressure, which paves the way for improving the performance of future photoelectric devices.
Received: 05 September 2024      Published: 04 November 2024
PACS:  87.15. Zg  
  78.56.-a (Photoconduction and photovoltaic effects)  
  71.20. Eh  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/41/11/117101       OR      https://cpl.iphy.ac.cn/Y2024/V41/I11/117101
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Zhi-Wei Shen
Zhong-Yan Wu
Shao-Jie Wang
He-Chong Wang
Hong-Kai Li
Jing Song
Guo-Ying Gao
Lin Wang
and Yong-Jun Tian
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