| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Carrier-Density-Determined Magnetoresistance in Semimetal SrIrO$_{3}$ |
| Liang Yang1,2†, Biao Wu1,2†, Xin Liu1,2,3, Mingyu Wang1,2, Congli He1,2*, Shouguo Wang1,4, and Jinxing Zhang1,2* |
1School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China
2Key Laboratory of Multiscale Spin Physics (Ministry of Education), Beijing Normal University, Beijing 100875, China
3SwissFEL, Paul Scherrer Institute, Villigen PSI 5232, Switzerland
4Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
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| Cite this article: |
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Liang Yang, Biao Wu, Xin Liu et al 2024 Chin. Phys. Lett. 41 107201 |
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Abstract SrIrO$_{3}$, a Dirac material with a strong spin-orbit coupling (SOC), is a platform for studying topological properties in strongly correlated systems, where its band structure can be modulated by multiple factors, such as crystal symmetry, elements doping, oxygen vacancies, magnetic field, and temperature. Here, we find that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO$_{3}$. The decrease of carrier density subdues the weak localization and the associated negative magnetoresistance, while enhancing the SOC-induced weak anti-localization. Notably, the sample with the lowest carrier density exhibits high-field positive magnetoresistance, suggesting the presence of a Dirac cone. In addition, the anisotropic magnetoresistance indicates the anisotropy of the electronic structure near the Fermi level. The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.
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Received: 17 June 2024
Published: 22 October 2024
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| PACS: |
72.15.Rn
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(Localization effects (Anderson or weak localization))
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73.43.Qt
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(Magnetoresistance)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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