| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures |
| Xinxin Jiang1, Zhikuan Wang1, Chong Li2, Xuelian Sun1, Lei Yang1, Dongmei Li1*, Bin Cui1*, and Desheng Liu1* |
1School of Physics, National Demonstration Center for Experimental Physics Education, Shandong University, Jinan 250100, China
2School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
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| Cite this article: |
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Xinxin Jiang, Zhikuan Wang, Chong Li et al 2024 Chin. Phys. Lett. 41 057501 |
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Abstract Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing information. Here, we propose a design for two-dimensional van der Waals heterostructures (vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an InSe monolayer and forming an InSe/In$_{2}$Se$_{3}$ vdWH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states ($P_\uparrow$ and $P_\downarrow$) of hole-doped In$_{2}$Se$_{3}$ with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures, showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.
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Received: 14 February 2024
Editors' Suggestion
Published: 28 May 2024
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| PACS: |
31.15.A-
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(Ab initio calculations)
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32.10.Dk
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(Electric and magnetic moments, polarizabilities)
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31.15.es
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(Applications of density-functional theory (e.g., to electronic structure and stability; defect formation; dielectric properties, susceptibilities; viscoelastic coefficients; Rydberg transition frequencies))
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31.15.ae
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(Electronic structure and bonding characteristics)
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