| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized ${\rm L1_{0}}$-MnAl/B2-CoGa Bilayer |
| Hong-Li Sun1,2, Rong-Kun Han1,2, Hong-Rui Qin1,2, Xu-Peng Zhao3, Zhi-Cheng Xie1,2, Da-Hai Wei1,2, and Jian-Hua Zhao1,2* |
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
3International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
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| Cite this article: |
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Hong-Li Sun, Rong-Kun Han, Hong-Rui Qin et al 2024 Chin. Phys. Lett. 41 057503 |
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Abstract Rare-earth-free Mn-based binary alloy ${\rm L1_{0}}$-MnAl with bulk perpendicular magnetic anisotropy (PMA) holds promise for high-performance magnetic random access memory (MRAM) devices driven by spin-orbit torque (SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between ${\rm L1_{0}}$-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick ${\rm L1_{0}}$-MnAl on B2-CoGa, and the ${\rm L1_{0}}$-MnAl exhibits a large PMA constant of $1.04\times 10^{6}$ J/m$^{3}$. Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an ${\rm L1_{0}}$-MnAl/B2-CoGa/Co$_{2}$MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on ${\rm L1_{0}}$-MnAl alloy.
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Received: 20 March 2024
Published: 23 May 2024
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| PACS: |
75.47.Np
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(Metals and alloys)
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75.30.Gw
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(Magnetic anisotropy)
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72.25.Mk
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(Spin transport through interfaces)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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