| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tuning Second Chern Number in a Four-Dimensional Topological Insulator by High-Frequency Time-Periodic Driving |
| Zheng-Rong Liu1, Rui Chen1*, and Bin Zhou1,2* |
1Department of Physics, Hubei University, Wuhan 430062, China
2Key Laboratory of Intelligent Sensing System and Security of Ministry of Education, Hubei University, Wuhan 430062, China
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| Cite this article: |
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Zheng-Rong Liu, Rui Chen, and Bin Zhou 2024 Chin. Phys. Lett. 41 047102 |
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Abstract Floquet engineering has attracted considerable attention as a promising approach for tuning topological phase transitions. We investigate the effects of high-frequency time-periodic driving in a four-dimensional (4D) topological insulator, focusing on topological phase transitions at the off-resonant quasienergy gap. The 4D topological insulator hosts gapless three-dimensional boundary states, characterized by the second Chern number $C_{2}$. We demonstrate that the second Chern number of 4D topological insulators can be modulated by tuning the amplitude of time-periodic driving. This includes transitions from a topological phase with $C_{2}=\pm3$ to another topological phase with $C_{2}=\pm1$, or to a topological phase with an even second Chern number $C_{2}=\pm2$, which is absent in the 4D static system. Finally, the approximation theory in the high-frequency limit further confirms the numerical conclusions.
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Received: 20 January 2024
Editors' Suggestion
Published: 09 April 2024
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| PACS: |
03.67.Lx
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(Quantum computation architectures and implementations)
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03.67.-a
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(Quantum information)
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03.65.Yz
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(Decoherence; open systems; quantum statistical methods)
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03.67.Pp
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(Quantum error correction and other methods for protection against decoherence)
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