| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Interstitial Doping of SnO$_{2}$ Film with Li for Indium-Free Transparent Conductor |
| Xingqian Chen1,2,5, Haozhen Li1,2,5, Wei Chen2,4, Zengxia Mei1,2, Alexander Azarov3, Andrej Kuznetsov3, and Xiaolong Du1,2,4* |
1Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2Songshan Lake Materials Laboratory, Dongguan 523808, China
3Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway
4Guangdong SinoPrime Technology Co., Ltd., Dongguan 523808, China
5School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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| Cite this article: |
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Xingqian Chen, Haozhen Li, Wei Chen et al 2024 Chin. Phys. Lett. 41 037305 |
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Abstract SnO$_{2}$ films exhibit significant potential as cost-effective and high electron mobility substitutes for In$_{2}$O$_{3}$ films. In this study, Li is incorporated into the interstitial site of the SnO$_{2}$ lattice resulting in an exceptionally low resistivity of $2.028 \times 10^{-3}\,\Omega \cdot$cm along with a high carrier concentration of $1.398 \times 10^{20}$ cm$^{-3}$ and carrier mobility of 22.02 cm$^{2}$/V$\cdot$s. Intriguingly, Li$_{i}$ readily forms in amorphous structures but faces challenges in crystalline formations. Furthermore, it has been experimentally confirmed that Li$_{i}$ acts as a shallow donor in SnO$_{2}$ with an ionization energy $\Delta E_{\rm D1}$ of $-0.4$ eV, indicating spontaneous occurrence of Li$_{i}$ ionization.
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Received: 22 January 2024
Express Letter
Published: 15 March 2024
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| PACS: |
73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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78.90.+t
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(Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter)
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81.15.Cd
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(Deposition by sputtering)
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