Chin. Phys. Lett.  2023, Vol. 40 Issue (11): 117102    DOI: 10.1088/0256-307X/40/11/117102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium
Yao Wang1,2†, Zhenzhen Lei1†, Jinsen Zhang1, Xinyong Tao1, Chenqiang Hua3,4*, and Yunhao Lu3
1College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China
2Moganshan Research Institute at Deqing County Zhejiang University of Technology, Huzhou 313000, China
3School of Physics, Zhejiang University, Hangzhou 310027, China
4Zhongfa Aviation Institute of Beihang University, Hangzhou 311115, China
Cite this article:   
Yao Wang, Zhenzhen Lei, Jinsen Zhang et al  2023 Chin. Phys. Lett. 40 117102
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Abstract Two-dimensional (2D) ferroelectric (FE) systems are promising candidates for non-volatile nanodevices. Previous studies mainly focused on 2D compounds. Though counter-intuitive, here we propose several new phases of tellurium with (anti)ferroelectricity. Two-dimensional films can be viewed as a collection of one-dimensional chains, and lone-pair instability is responsible for the (anti)ferroelectricity. The total polarization is determined to be $0.34 \times 10^{-10}$ C/m for the FE ground state. Due to the local polarization field in the FE film, we show a large Rashba splitting ($\alpha_{\scriptscriptstyle{\rm R}} \sim 2$ eV$\cdot$Å) with nonzero spin Hall conductivity for experimental detection. Furthermore, a dipole-like distribution of Berry curvature is verified, which may facilitate a nonlinear Hall effect. Because Rashba-splitting/Berry-curvature distributions are fully coupled with a polarization field, they can be reversed through FE phase transition. Our results not only broaden the elemental FE materials, but also shed light on their intriguing transport phenomena.
Received: 27 August 2023      Editors' Suggestion Published: 07 November 2023
PACS:  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
  72.80.Cw (Elemental semiconductors)  
  77.80.-e (Ferroelectricity and antiferroelectricity)  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/40/11/117102       OR      https://cpl.iphy.ac.cn/Y2023/V40/I11/117102
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Yao Wang
Zhenzhen Lei
Jinsen Zhang
Xinyong Tao
Chenqiang Hua
and Yunhao Lu
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