| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Ambipolar Doping of Monolayer FeSe by Interface Engineering |
| Fang-Jun Cheng1, Yi-Min Zhang1, Jia-Qi Fan1, Can-Li Song1,2*, Xu-Cun Ma1,2, and Qi-Kun Xue1,2,3,4 |
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
2Frontier Science Center for Quantum Information, Beijing 100084, China
3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
4Southern University of Science and Technology, Shenzhen 518055, China
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| Cite this article: |
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Fang-Jun Cheng, Yi-Min Zhang, Jia-Qi Fan et al 2023 Chin. Phys. Lett. 40 086801 |
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Abstract We report on ambipolar modulation doping of monolayer FeSe epitaxial films grown by molecular beam epitaxy and in situ spectroscopic measurements via a cryogenic scanning tunneling microscopy. It is found that hole doping kills superconductivity in monolayer FeSe films on metallic Ir(001) substrates, whereas electron doping from polycrystalline IrO$_2$/SrTiO$_3$ substrate enhances significantly the superconductivity with an energy gap of 10.3 meV. By exploring substrate-dependent superconductivity, we elucidate the essential impact of substrate work functions on the superconductivity of monolayer FeSe films. Our results therefore offer a valuable reference guide for further enhancement of the transition temperature $T_{\rm c}$ in FeSe-based superconductors by interface engineering.
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Received: 31 March 2023
Editors' Suggestion
Published: 21 July 2023
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| PACS: |
74.78.-w
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(Superconducting films and low-dimensional structures)
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07.79.Cz
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(Scanning tunneling microscopes)
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07.79.-v
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(Scanning probe microscopes and components)
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74.25.Jb
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(Electronic structure (photoemission, etc.))
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