| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Highly Tunable Perpendicular Magnetic Anisotropy and Anisotropic Magnetoresistance in Ru-Doped La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ Epitaxial Films |
| Enda Hua1, Kunjie Dai1, Qing Wang1, Huan Ye1, Kuan Liu1, Jinfeng Zhang1, Jingdi Lu1,, Kai Liu1, Feng Jin1, Lingfei Wang1*, and Wenbin Wu1,2* |
1Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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| Cite this article: |
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Enda Hua, Kunjie Dai, Qing Wang et al 2023 Chin. Phys. Lett. 40 077501 |
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Abstract As a prototypical half-metallic ferromagnet, La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy (PMA) limits the controllability and detection of magnetism in LSMO, thus hindering the realization of oxide-based spintronic devices with low energy consumption and high integration level. Motivated by this challenge, we develop an experimental approach to enhance the PMA of LSMO epitaxial films. By cooperatively introducing 4$d$ Ru doping and a moderate compressive strain, the maximum uniaxial magnetic anisotropy in Ru-doped LSMO can reach $3.0 \times 10^{5}$ J/m$^{3}$ at 10 K. Furthermore, we find a significant anisotropic magnetoresistance effect in these Ru-doped LSMO films, which is dominated by the strong PMA. Our findings offer an effective pathway to harness and detect the orientations of magnetic moments in LSMO films, thus promoting the feasibility of oxide-based spintronic devices, such as spin valves and magnetic tunnel junctions.
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Received: 05 May 2023
Editors' Suggestion
Published: 10 June 2023
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| PACS: |
75.30.Gw
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(Magnetic anisotropy)
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73.43.Qt
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(Magnetoresistance)
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75.47.Lx
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(Magnetic oxides)
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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