| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Gate-Tunable Negative Differential Conductance in Hybrid Semiconductor–Superconductor Devices |
| Ming-Li Liu1,2†, Dong Pan3†, Tian Le1, Jiang-Bo He1, Zhong-Mou Jia1,2, Shang Zhu1,2, Guang Yang1, Zhao-Zheng Lyu1, Guang-Tong Liu1,4, Jie Shen1,4, Jian-Hua Zhao3*, Li Lu1,2,4*, and Fan-Ming Qu1,2,4* |
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4Songshan Lake Materials Laboratory, Dongguan 523808, China
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| Cite this article: |
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Ming-Li Liu, Dong Pan, Tian Le et al 2023 Chin. Phys. Lett. 40 067301 |
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Abstract Negative differential conductance (NDC) serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices. We report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor–superconductor devices, i.e., normal metal–superconducting nanowire–normal metal and normal metal–superconducting nanowire–superconductor devices. Specifically, we study the dependence of the NDCs on back-gate voltage and magnetic field. When the back-gate voltage decreases, these NDCs weaken and evolve into positive differential conductance dips; and meanwhile they move away from the superconducting gap towards high bias voltage, and disappear eventually. In addition, with the increase of magnetic field, the NDCs/dips follow the evolution of the superconducting gap, and disappear when the gap closes. We interpret these observations and reach a good agreement by combining the Blonder–Tinkham–Klapwijk (BTK) model and the critical supercurrent effect in the nanowire, which we call the BTK-supercurrent model. Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor–superconductor devices.
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Received: 04 April 2023
Published: 19 May 2023
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| PACS: |
73.23.-b
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(Electronic transport in mesoscopic systems)
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74.25.F-
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(Transport properties)
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74.45.+c
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(Proximity effects; Andreev reflection; SN and SNS junctions)
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