| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Ferroelectric Domain-Wall Transistor |
| Yang-Jun Ou, Jie Sun, Yi-Ming Li, and An-Quan Jiang* |
| State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China |
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Yang-Jun Ou, Jie Sun, Yi-Ming Li et al 2023 Chin. Phys. Lett. 40 038501 |
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Abstract On the basis of novel properties of ferroelectric conducting domain walls, the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density, high-speed and energy-efficient nanodevices. For in-memory computing, three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required. Here, a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial BiFeO$_{3}$ thin films. For the logic function, the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes. For the data storage, the transistor can maintain nonvolatile on/off states after the write/erase operations, providing an innovative approach for the development of the domain wall nanoelectronics.
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Received: 20 December 2022
Editors' Suggestion
Published: 18 February 2023
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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77.80.-e
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(Ferroelectricity and antiferroelectricity)
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