Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization

doi:10.1088/0256-307X/38/6/068102

Chin. Phys. Lett.

2021, Vol. 38

Issue (6): 068102 DOI: 10.1088/0256-307X/38/6/068102

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization

Lili Han^1,2,3, Chunhua Du^1,3,5, Ziguang Ma^1,3, Yang Jiang^1,3, Kanglin Xiong⁶, Wenxin Wang^1,3,4, Hong Chen^1,3,4, Zhen Deng^1,3,5*, and Haiqiang Jia^1,3,4*

¹Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
²University of Chinese Academy of Sciences, Beijing 100049, China
³Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
⁴Songshan Lake Materials Laboratory, Dongguan 523808, China
⁵The Yangtze River Delta Physics Research Center, Liyang 213000, China
⁶NANO-X, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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Lili Han, Chunhua Du, Ziguang Ma et al 2021 Chin. Phys. Lett. 38 068102

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Abstract The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications. We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth principle. The lowest specific contact resistivity of Au(100 nm)/Pt(115 nm)/Ni (50 nm) can reach $2.64 \times 10^{-6}\,\Omega \cdot$cm$^{2}$ after annealing at 380 ℃ for 1 min, while the contact characteristics of Au/Ni deteriorated after annealing from 340 ℃ to 480 ℃ for 1 min. The results of scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy show that the Pt layer is an important factor in improving the contact characteristics. The Pt layer prevents the diffusion of In and Au, inhibits the formation of Au$_{3}$In metal compounds, and prevents the deterioration of the ohmic contact. The metal structures and optimized annealing process is expected to be helpful for obtaining high-performance InP-related devices.

Received: 17 January 2021 Published: 15 May 2021

PACS:	81.40.-z	(Treatment of materials and its effects on microstructure, nanostructure, And properties)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	66.30.-h	(Diffusion in solids)

Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 62004218, 61704008, 61804176, and 61991441), Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2021005), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Jiangsu Science and Technology Plan (Grant No. BK20180255). This work is also supported by the Center for Clean Energy, Institute of Physics, Chinese Academy of Sciences.

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https://cpl.iphy.ac.cn/10.1088/0256-307X/38/6/068102 OR https://cpl.iphy.ac.cn/Y2021/V38/I6/068102

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	Lili Han
	Chunhua Du
	Ziguang Ma
	Yang Jiang
	Kanglin Xiong
	Wenxin Wang
	Hong Chen
	Zhen Deng
	and Haiqiang Jia

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