| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Performance Enhancement of AlGaN/GaN MIS-HEMTs Realized via Supercritical Nitridation Technology |
| Meihua Liu , Zhangwei Huang , Kuanchang Chang , Xinnan Lin , Lei Li , and Yufeng Jin* |
| School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |
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| Cite this article: |
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Meihua Liu , Zhangwei Huang , Kuanchang Chang et al 2020 Chin. Phys. Lett. 37 097101 |
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Abstract This paper proposes a method of repairing interface defects by supercritical nitridation technology, in order to suppress the threshold voltage shift of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). We find that supercritical NH$_{3}$ fluid has the characteristics of both liquid NH$_{3}$ and gaseous NH$_{3}$ simultaneously, i.e., high penetration and high solubility, which penetrate the packaging of MIS-HEMTs. In addition, NH$_{2}^{-}$ produced via the auto coupling ionization of NH$_{3}$ has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature processes. After supercritical fluid treatment, the threshold voltage shift is reduced from 1 V to 0 V, and the interface trap density is reduced by two orders of magnitude. The results show that the threshold voltage shift of MIS-HEMTs can be effectively suppressed by means of supercritical nitridation technology.
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Received: 09 May 2020
Published: 01 September 2020
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| PACS: |
71.55.Eq
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(III-V semiconductors)
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73.20.-r
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(Electron states at surfaces and interfaces)
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73.50.-h
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(Electronic transport phenomena in thin films)
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| Fund: Supported by the Shenzhen Science and Technology Innovation Committee (Grant Nos. ZDSYS201802061805105, JCYJ20190808155007550K, QJSCX20170728102129176, and JCYJ20170810163407761), and the National Natural Science Foundation of China (Grant No. U1613215). |
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