CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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An Origin of Dzyaloshinskii–Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction |
Jin Yang1, Jian Li1, Liangzhong Lin2, and Jia-Ji Zhu1* |
1School of Science and Laboratory of Quantum Information Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 2School of Information Engineering, Zhongshan Polytechnic, Zhongshan 528400, China
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Cite this article: |
Jin Yang, Jian Li, Liangzhong Lin et al 2020 Chin. Phys. Lett. 37 087501 |
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Abstract We present a theory of both the itinerant carrier-mediated RKKY interaction and the virtual excitations-mediated Bloembergen–Rowland (BR) interaction between magnetic moments in graphene induced by proximity effect with a ferromagnetic film. It is shown that the RKKY/BR interaction consists of the Heisenberg, Ising, and Dzyaloshinskii–Moriya (DM) terms. In the case of the nearest distance, we estimate the DM term from the RKKY/BR interaction is about $0.13$ meV for the graphene/Co interface, which is consistent with the experimental result of DM interaction $0.16\pm0.05$ meV. Our calculations indicate that the intralayer RKKY/BR interaction may be a possible physical origin of the DM interaction in the graphene-ferromagnet interface. This work provides a new perspective to comprehend the DM interaction in graphene/ferromagnet systems.
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Received: 28 June 2020
Published: 04 July 2020
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PACS: |
75.30.Gw
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(Magnetic anisotropy)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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75.70.Cn
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(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
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75.70.Tj
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(Spin-orbit effects)
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Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11404043 and 1160041160), the Key Technology Innovations Project to Industries of Chongqing (Grant No. cstc2016zdcy-ztzx0067), and the Graduate Research Innovation Project of Chongqing (Grants No. CYS18253). |
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