| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Site Preference of Se and Te in Bi$_2$Se$_{3-x}$Te$_x$ Thin Films |
| Yizhe Sun1, Moorthi Kanagaraj1, Qinwu Gao1, Yafei Zhao1, Jiai Ning1, Kunpeng Zhang2, Xianyang Lu1,2, Liang He1,3*, and Yongbing Xu1,2,3* |
1National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
2York-Nanjing Joint Center (YNJC) for Spintronics and Nano-engineering, University of York, York YO105DD, United Kingdom
3Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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| Cite this article: |
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Yizhe Sun, Moorthi Kanagaraj, Qinwu Gao et al 2020 Chin. Phys. Lett. 37 077501 |
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Abstract The ternary topological insulators Bi$_2$Se$_{3-x}$Te$_x$ have attracted a great deal of attention due to their exotic physical and chemical properties. While most of the studies focus on the properties of these ternary TIs, limited research was performed to investigate the dynamic atomic stack of its crystal structure. We prepared high-quality Bi$_2$Se$_{3-x}$Te$_x$ thin films on GaAs(111)B substrates using molecular beam epitaxy, characterized with Raman spectroscopy, x-ray diffraction and photoelectron spectroscopy. It is found that when Se is replaced by Te, the preferred substituting sites are the middle layer at $0 < x < 1$, and this is also valid for Se substituting Te at $2 < x < 3$. In the middle region, the substituting atoms prefer to go to the first and the fifth layer.
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Received: 20 March 2020
Published: 21 June 2020
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| Fund: Supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300803), the National Natural Science Foundation of China (Grant Nos. 61474061, 61674079, and 61974061), and the Jiangsu ShuangChuang Program and the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20140054). |
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