| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Bipolar Thermoelectrical Transport of SnSe Nanoplate in Low Temperature |
| Li-Yan Zhou1,2, Qi Zheng1,2, Li-Hong Bao1,2, Wen-Jie Liang1,2,3** |
1Beijing National Center for Condensed Matter Physics, Beijing Key Laboratory for Nanomaterials and Nanodevices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2CAS Center of Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190
3Songshan Lake Materials Laboratory, Dongguan 523808
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| Cite this article: |
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Li-Yan Zhou, Qi Zheng, Li-Hong Bao et al 2020 Chin. Phys. Lett. 37 017301 |
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Abstract Bulk SnSe is an excellent thermoelectrical material with the highest figure-of-merit value of ZT = 2.8, making it promising in applications. Temperature-dependent electrical and thermoelectrical properties of SnSe nanoplates are studied at low temperature. Conductivity drops and rises again as temperature is lowered. The Seebeck coefficient is positive at room temperature and becomes negative at low temperature. The change of the sign of the Seebeck coefficient indicates influence of bipolar transport of the semiconductive SnSe nanoplate. The bipolar transport is caused by the Fermi energy changing with temperature due to different contributions from donors and acceptors at different temperatures.
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Received: 12 October 2019
Published: 23 December 2019
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| PACS: |
73.50.Lw
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(Thermoelectric effects)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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73.63.Bd
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(Nanocrystalline materials)
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85.80.Fi
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(Thermoelectric devices)
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| Fund: Supported by the National Basic Research Program of China under Grant No. 2016YFA0200800, the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No. XDB30000000, the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No. XDB07030100, the Sinopec Innovation Scheme (A-381), and the Rise.Sinopec Fund under Grant No. 10010104-18-ZC0609-0003. |
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