| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Hole Injection Enhancement of MoO$_{3}$/NPB/Al Composite Anode |
| Yanjing Tang, Xianxi Yu, Shaobo Liu, Anran Yu, Jiajun Qin, Ruichen Yi, Yuan Pei, Chunqin Zhu, Xiaoyuan Hou** |
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433
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| Cite this article: |
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Yanjing Tang, Xianxi Yu, Shaobo Liu et al 2019 Chin. Phys. Lett. 36 127201 |
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Abstract An ultra-thin molybdenum(VI) oxide (MoO$_{3})$ modification layer can significantly improve hole injection from an electrode even though the MoO$_{3}$ layer does not contact the electrode. We find that as the thickness of the organic layer between MoO$_{3}$ and the electrode increases, the hole injection first increases and it then decreases. The optimum thickness of 5 nm corresponds to the best current improvement 70%, higher than that in the device where MoO$_{3}$ directly contacts the Al electrode. According to the 4,4-bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl (NPB)/MoO$_{3}$ interface charge transfer mechanism and the present experimental results, we propose a mechanism that mobile carriers generated at the interface and accumulated inside the device change the distribution of electric field inside the device, resulting in an increase of the probability of hole tunneling through the injection barrier from the electrode, which also explains the phenomenon of hole injection enhanced by MoO$_{3}$/NPB/Al composite anode. Based on this mechanism, different organic materials other than NPB were applied to form the composite electrode with MoO$_{3}$. Similar current enhancement effects are also observed.
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Received: 10 September 2019
Published: 25 November 2019
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| PACS: |
72.80.Ga
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(Transition-metal compounds)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 11874007 and 11574049. |
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