| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates |
| Xue-Hui Lu1,2**, Cheng-Bin Jing1**, Lian-Wei Wang1, Jun-Hao Chu1,3 |
1Key Laboratory of Polar Materials and Devices (Ministry of Education), Institute of Functional Materials, Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241
2Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433
3State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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Xue-Hui Lu, Cheng-Bin Jing, Lian-Wei Wang et al 2019 Chin. Phys. Lett. 36 098501 |
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Abstract We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room temperature. The best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz$^{1/2}$ for noise equivalent power 0.57 pW/Hz$^{1/2}$. The measured response time of the device is about 9 μs, demonstrating that the detector has a speed of $>$110 kHz. The achieved good performance, together with large detector size (acceptance area is 3 μm$\times 160$ μm), simple structure, easy manufacturing method, compatibility with mature silicon technology, and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.
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Received: 25 June 2019
Published: 23 August 2019
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Sx
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(Metal-semiconductor-metal structures)
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95.55.Rg
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(Photoconductors and bolometers)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61775060 and 61275100. |
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