| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate |
| Qi Wang1,2, Jun-Chi Yu1,2, Tao Tao1,2, Bin Liu1,2**, Ting Zhi3, Xu Cen1,2, Zi-Li Xie1,2, Xiang-Qian Xiu1,2, Yu-Gang Zhou1,2, You-Dou Zheng1,2, Rong Zhang1,2 |
1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093
3College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210093
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| Cite this article: |
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Qi Wang, Jun-Chi Yu, Tao Tao et al 2019 Chin. Phys. Lett. 36 088501 |
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Abstract GaN-based micro light emitting diodes (micro-LEDs) on silicon (Si) substrates with 40 μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques. From current-voltage curves, the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10$^{-8}$ A/cm$^{2}$ indicate good electrical characteristics. As the injection current increases, the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays, because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs. Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures, the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.
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Received: 11 April 2019
Published: 22 July 2019
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100, the National Natural Science Foundation of China under Grant Nos 61674076, 61674081 and 61605071, the Natural Science Foundation of Jiangsu Province under Grant Nos BY2013077, BK20141320 and BE2015111, the Six Talent Peaks Project of Jiangsu Province under Grant No XYDXX-081, the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2017KF03, the Fundamental Research Funds for the Central Universities, and the Collaborative Innovation Center of Solid State Lighting and Energy-Saving Electronics. |
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