| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Full-Quantum Simulation of Graphene Self-Switching Diodes |
| Ashkan Horri1**, Rahim Faez2 |
1Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran
2Department of Electrical Engineering Tehran, Sharif University of Technology, Iran
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| Cite this article: |
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Ashkan Horri, Rahim Faez 2019 Chin. Phys. Lett. 36 067202 |
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Abstract We present a quantum study on the electrical behavior of the self-switching diode (SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method, electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero, reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.
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Received: 21 January 2019
Published: 18 May 2019
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| PACS: |
72.80.Vp
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(Electronic transport in graphene)
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85.35.-p
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(Nanoelectronic devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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