| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer |
| Yi-Fu Wang1,2, Mussaab I. Niass1,2, Fang Wang1,2,3**, Yu-Huai Liu1,2,3** |
1National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001
2International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001
3School of Information Engineering, Zhengzhou University, Zhengzhou 450001
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Yi-Fu Wang, Mussaab I. Niass, Fang Wang et al 2019 Chin. Phys. Lett. 36 057301 |
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Abstract A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the single-tapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.
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Received: 23 January 2019
Published: 17 April 2019
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| Fund: Supported by the National Key Research and Development Program under Grant No 2016YFE0118400, the Key Project of Science and Technology of Henan Province under Grant No 172102410062, the National Natural Science Foundation of China under Grant No 61176008, and the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project under Grant No U1604263. |
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| [1] | Wunderer T, Chua C L, Yang Z H, Northrup J E, Johnson N M, Garrett G A, Shen H E and Wraback M 2011 Appl. Phys. Express 4 092101 | | [2] | Abe S, Sato S, Ito E, Tsukuda M, Tomiyama M and Ohno E 2002 Jpn. J. Appl. Phys. 41 1704 | | [3] | Yoshida H, Yamashita Y, Kuwabara M and Kan H 2008 Appl. Phys. Lett. 93 241106 | | [4] | Yang W, Li D, Liu N Y, Chen Z, Wang L, Liu L, Li L, Wan C H, Chen W H, Hu X D and Du W M 2012 Appl. Phys. Lett. 100 031105 | | [5] | Yoshida H, Takagi Y, Kuwabara M, Amano H and Kan H 2007 Jpn. J. Appl. Phys. 46 5782 | | [6] | Kneissl M, Treat D W, Teepe M, Miyashita N and Johnson N M 2003 Appl. Phys. Lett. 82 4441 | | [7] | Masui S, Matsuyama Y, Yanamoto T, Kozaki T, Nagahama S and Mukai T 2003 Jpn. J. Appl. Phys. 42 L1318 | | [8] | Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Kamiyama S, Amano H and Akasaki I 2004 Jpn. J. Appl. Phys. 43 L499 | | [9] | Edmond J, Abare A, Bergman M, Bharathan J, Bunker K L, Emerson D, Haberern K, Ibbetson J, Leung M, Russel P and Slater D 2004 J. Cryst. Growth 272 242 | | [10] | Hirayama H, Yatabe T, Noguchi N, Ohashi T and Kamata N 2007 Appl. Phys. Lett. 91 071901 | | [11] | Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M and Gaska R 2010 Appl. Phys. Lett. 96 061102 | | [12] | Adivarahan V, Sun W H, Chitnis A, Shatalov M, Wu S, Maruska H P and Khan M A 2004 Appl. Phys. Lett. 85 2175 | | [13] | Taniyasu Y, Kasu M and Makimoto T 2006 Nature 441 325 | | [14] | Niass M I, Zang J W, Lu Z Q, Du Z Q, Chen X, Qu Y P, Wang F and Liu Y H 2019 J. Cryst. Growth 506 24 | | [15] | Mukai T, Yamada M and Nakamura S 1999 Jpn. J. Appl. Phys. 38 3976 | | [16] | Han S H, Lee D Y, Lee S J, Cho C Y, Kwon M K, Lee S P, Noh D Y, Kim D J, Kim Y C and Park S J 2009 Appl. Phys. Lett. 94 231123 | | [17] | Choi S, Kim H J, Kim S S, Liu J P, Kim J, Ryou J H, Dupuis R D, Fischer A M and Ponce F A 2010 Appl. Phys. Lett. 96 221105 | | [18] | Liu C, Ren Z W, Chen X, Zhao B J, Wang X F and Li S T 2014 IEEE Photon. Technol. Lett. 26 1368 | | [19] | David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G and Krames M R 2008 Appl. Phys. Lett. 92 053502 | | [20] | Yang W, Li D, He J and Hu X D 2013 Phys. Status Solidi C 10 346 | | [21] | Satter M M, Lochner Z, Kao T T, Liu Y S, Li X H, Shen S C and Dupuis R D 2014 IEEE J. Quantum Electron. 50 3 |
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