2011, Vol. 28(12): 128501-128501    DOI: 10.1088/0256-307X/28/12/128501
	Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
	CHEN Jun1,2, FAN Guang-Han1**, PANG-Wei2, ZHENG Shu-Wen1
	1Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631 2Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006
	收稿日期 2011-08-13  修回日期 1900-01-01
	Supporting info
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