2011, Vol. 28(12): 127303-127303 DOI: 10.1088/0256-307X/28/12/127303 | ||
Surface Potential Equation for Metal-Oxide-Semiconductor Capacitors Considering the Degenerate Effect | ||
ZHANG Da, SUN Jiu-Xun**, PU Jin-Rong | ||
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 | ||
收稿日期 2011-07-19 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Gildenblat G, Li X, Wu W M, Wang H L, Jha A, van Langevelde R, Smit G D J, Scholten A J and Klaassen D B M 2006 IEEE Trans. Electron. Devices 53 1979 [2] Pao H C and Sah C T 1966 Solid-State Electron. 9 927 [3] McAndrew C C and Victory J 2002 IEEE Trans. Electron. Devices 49 72 [4] Wu W, Chen T L, Gildenblat G and McAndrew C C 2004 IEEE Trans. Electron. Devices 51 1196 [5] He J, Chan M S, Zhang X and Wang Y Y 2006 IEEE Trans. Electron. Devices 53 2008 [6] Gildenblat G, Zhu Z and McAndrew C C 2009 Solid-State Electron. 53 11 [7] Zhu Z and Gildenblat G 2009 Electron. Lett. 45 346 [8] Sze S M and Ng K K 2006 Physics of Semiconductor Devices 3rd edn (New York: Wiley) p 10 [9] Guillaumot B et al 2002 International Electron Devices Meeting Digest (Piscataway, NJ, 8–11 December 2002) p 355 [10] Xuan P and Bokor J 2003 IEEE Electron. Lett. 24 634 [11] Stern F 1972 Phys. Rev. B 5 4891 [12] Karim M A and Haque A 2010 IEEE Trans. Electron. Devices 57 496 [13] Li F et al 2005 IEEE Trans. Electron. Devices 52 1148 |
||